POWER DEPENDENCE OF POLYCRYSTALLINE SILICON THIN FILM CRYSTALLINITIES WITH MULTILINE BEAM CONTINUOUS-WAVE LASER LATERAL CRYSTALLIZATION

Tóm tắt

Polycrystalline Silicon Thin Film Transistors (poly-Si TFTs) have been played as important driving elements for Flat panel display (FPD). In this work, we studied crystallinities of laser-crystallized poly-Si thin films using Multi-Line Beam (MLB) –CLC and investigated the dependence of poly-Si thin films on the conditions of laser power along with scanning speed. Surface orientation of poly-Si thin films were observed by X-Ray Diffraction (XRD) and Electron Back Scattering Diffraction (EBSD) measurement. In addition, the stress values of polySi thin films varied with laser powers were calculated from Raman spectra. We found that highly (100)-surface oriented poly-Si thin films were obtained as changing the laser power along with changing scanning speeds from 5 W to 7 W. The poly-Si thin films formed at low laser power values had better (100)-surface orientation