STRUCTURAL, ELECTRICAL AND MAGNETIC PROPERTIES OF FeGa2O4-δ EPITAXIAL FILM ON MgO(100) SUBSTRATE

Abstract

In this paper, we reported on the growth, structural, electrical and magnetic properties of FeGa2O4-δ thin film on MgO(100) substrate by using Molecular
Beam Epitaxy method. The Reflection-High-Energy-Electron Diffraction image indicates that epitaxial film was grown in layer-by-layer mode along the
MgO(100) plane. The crystal structure in single phase with cubic structure of FeGa2O4-δ was pointed out by the X-ray diffraction whereas their inverse spinel
characterization was revealed by analysing Raman spectrum. We find that the films exhibit the semiconductor behaviour and magnetoresistance with the
maximum value of 9% at 150K under external magnetic field of 8kOe. The magnetization hysteresis (M-H) loops of film observed at room temperature like
ferrimagnetism state with easy magnetization axis in perpendicular to the film surface.