Resistance switching behavior of ZnO thin films for random access memory applications

  • Nguyễn Trung Độ
  • Đào Vân Thúy
  • Phạm Kim Ngọc
  • Tạ Thị Kiều Hạnh
  • Lê Trấn
  • Trần Tuấn
  • Lê Văn Hiếu
  • Lee Jaichan
  • Đặng Mậu Chiến
  • Phan Bách Thắng

Abstract

We investigated resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V – 0.6 V). Our results figured out that the Ag/ZnO/Ti/Glass structure is a candidate structure for nonvolatile data storage applications.

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Published
2013-11-06
Issue
Vol. 16 No. 1K (2013)
Section
ARTILES
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