Simulation of current-voltage characteristics of graphene field effect transistor (GFET)
Abstract
Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.
điểm /
đánh giá
Published
2014-03-19
Issue
Section
ARTILES
Copyright belongs to VNU-HCM “Science and Technology Development” Journal. Any copy or reprinting of any form must be permitted by the Journal.