Study on influences of Sb doping content on the defects of ZnO film by photoluminescence (PL) spectrum and raman scattering

Abstract

Sb-doped ZnO thin films with different values of Sb concentrations are deposited on glass substrate by using spin-coating technique. The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum. The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation. The strong violet emission peak located at 3.11 eV is observed in the Sb-doped ZnO thin film by photoluminescence. Conbining the Raman scattering spectrum with photoluminescence, it is concluded that the strong violet emission peak related to SbZn-O complex defect in ZnO:Sb film.