SUBSTRATE TEMPERATURE EFFECTS ON STRUCTURE AND ELECTRICAL CHARACTERISTICS OF TCO THIN FILM SnO2: Sb PREPARED BY REACTIVE MAGNETRON SPUTTERING

Abstract

The transparent electrode films SnO₂:Sb were prepared by reactive magnetron sputtering method on glass substrate with various substrate temperatures. The material of target is alloy of Sn (99,5% purity) doped Sb (5% Sb by weight). The deposition processes were carried out in mixture of Ar (99,99% purity) and O₂ (99,999% purity) gas. The vacuum inside the deposition chamber can get to about 10^-5torr. The substrate temperatures during the depositing processes were kept at fixed values between the room temperature and 450⁰C. The dependence of crystal size and conductivity of films on substrate temperature were also investigated.