The influence of doping Ga atom on conductive properties of ZnO thin film made by Magnetron sputtering

Abstract

The transparent conductive thin films ZnO-Ga are rf magnetron sputtered from ZnO target doped 4.4% of Ga at a power of 200W. These films have resistivity as low as 4.6 x 10-4 cm and the optical transmittance of 85% (at 550nm). At room temperature, these films have good structure properties with very high orientation of (002) plane. The conductive properties were less affected by the bombardment of high energetic negative ions due to low surface ionization of the target. In addition, these films have high heat resistance in the atmospheric air due to high solubility of Ga in ZnO lattice.