Transparent conducting ZnO:In thin films prepared by magnetron DC sputtering method
Abstract
ZnO:In thin films was deposited on glass substrate by magnetron DC sputtering method from ceramic target. The ZnO:In ceramic targets have concentrations of In2O3 varying between 1 and 4wt%. The ZnO:In film has the resistivity with value of 1.79 x 10-3 Ωcm, at a layer thickness of about 1µm, corresponding with ZnO:In target (2%wt In2O3), at the substrate temperature of about 2400C. All ZnO:In thin films have the transparence above 85% in the visible spectra.
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Published
2012-09-14
Issue
Section
ARTILES
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