Simulation of current-voltage characteristics of spin field effect transistor using Nemo-Vn2

Abstract

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work, we provide an overview of spin field effect transistor. We use the simulator to explore the performance of spin FET. The model of the spin FET is based on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored.