Design optimization of extremely shortchannel graded Si/SiGe heterojunction tunnel field-effect transistors for low power applications

  • Nguyễn Đăng Chiến
  • Lưu Thế Vinh

Abstract

This study investigates, by a two-dimensional simulation, the design optimization of a proposed 8 nm tunnel field-effect transistor (TFET)for low standby power (LSTP) applications utilizing graded Si/SiGe heterojunction with deviceparameters based on the ITRS specifications. The source Ge mole fraction should be designed approximately 0.8 because using lower Ge fractions causes severe short-channel effects whilewith higher values does not significantly improve the device performance but may create big difficulties in fabrication. Based on simultaneously optimizing the subthreshold swing, on- and off-currents, optimum values of source doping, drain doping and length of the proposed device are approximately 1020cm-3, 1018cm-3, and 10 nm, respectively. The 8 nm graded Si/SiGe  TFET with optimized device parameters demonstrates high on-current of 360  µA/µm, low off-current of 0.5 pA/µm, low threshold voltage of 85 mV and very steep subthreshold swing of sub-10 mV/decade. The designed TFET with graded Si/SiGe heterojunction exhibits an excellent performance and makes it an attractive candidate for future LSTP technologies because of its reality to be fabricated with existing FET and SiGe growth techniques. 

điểm /   đánh giá
Published
2016-01-18
Section
Articles