FABRICATION AND STUDY OF OPTICAL PROPERTIES OF TERNARY ZnTeS SEMICONDUCTOR QUANTUM DOTS
Keywords:
Ternary, semiconductor, quantum dots, optical properties, ZnTe1-xSx
Abstract
Ternary ZnTe1-xSx (0 ≤ x ≤ 1) semiconductor quantum dots (QDs) with varying x composition were successfully fabricated by a wet chemical method in ODE solvent. Their crystal structure, oscillation characteristics, and optical properties were studied through X-ray diffraction patterns (XRD), Raman (RS), absorption spectra (Abs), and
photoluminescence (PL). The results showed that ternary ZnTe1-xSx QDs have the zincblende (ZB) structure when x changes. When changing x composition, the emission wavelength of ternary ZnTe1-xSx QDs can change from 408 nm to 526 nm. Evidence of ternary ZnTe1-xSx QDs with uniform Se and S compositions was studied and proven through XRD patterns and RS scattering spectra.
