Analysis of electron transport coefficients in gas mixtures for plasma discharge in emiconductor etching- Atrend in mining electrical equipment manufacturing

Tóm tắt

This study presents the calculation and analysis of electron transport coefficients in gas mixtures composed of argon (Ar), molecular fluorine (F₂), and nitrogen (N₂), with a focus on their relevance to gas discharge applications. Using the BOLSIG+ Boltzmann solver and well-established electron collision cross-section data, key parameters such as mobility, diffusion coefficients, and ionization coefficients were evaluated across a range of reduced electric fields (E/N) and mixture ratios. These data serve as critical input for the modeling and optimization of low-temperature plasma discharges, particularly in applications such as reactive ion etching and thin film deposition using inductively coupled plasma systems.