ENERGY STORAGE PERFORMANCE OF La-DOPED PZT RELAXOR-FERROELECTRIC THIN FILMS FABRICATED BY SOL-GEL PROCESS

Abstract

La-doped PZT Relaxor ferroelectric (RFE) thin films have been fabricated on the platinum-buffered silicon substrates by a sol-gel process. The microstructure, grain size, electrical properties, and energy-storage performance of the obtained thin films were investigated in detail. Scanning electron microscopy images revealed that PLZT thin films show the compact and dense structure. Surface morphology and microstructure of PZT and PLZT thin films indicated the surface grain size of PZT is larger than that of  PLZT. X-ray diffraction analysis showed that PLZT thin films are strong preferred orientation (100) and have a pure perovskite phase. Room temperature ferroelectric measurements showed that the maximum values of U_reco of 6.52 J/cm³ and energy-storage efficiency of 61.65% are achieved in the PLZT thin film with 8% La-doping at electric fields 1000 kV/cm and 1 kHz frequency. All these results indicated that the relaxor PLZT thin films with 8% La doping possess potential for capacitors with high energy-storage performance.