Analysis of a novel 3C-SiC thin layer on silicon diaphragms for enhanced stress amplification in MEMS piezoresistive pressure sensors

  • Nguyen Chi Cuong*, Trinh Xuan Thang, Lam Minh Thinh, Vuong Dinh Duy Phuc, Truong Huu Ly, Ngo Vo Ke Thanh, Le Quoc Cuong
Từ khóa: micro-electro-mechanical system pressure sensors, silicon, silicon carbide, stress

Tóm tắt

This study analyses the square diaphragm structure of a micro-electro-mechanical system (MEMS) pressure sensor using the finite element method (FEM). The research investigates an enhancement in stress distribution achieved by coating a silicon (Si) diaphragm with a thin layer of silicon carbide (3C-SiC)...

Tác giả

Nguyen Chi Cuong*, Trinh Xuan Thang, Lam Minh Thinh, Vuong Dinh Duy Phuc, Truong Huu Ly, Ngo Vo Ke Thanh, Le Quoc Cuong

Research Laboratories of Saigon High-Tech-Park, Lot I3, N2 Street, Saigon High-Tech-Park, District 9, Ho Chi Minh City, Vietnam

điểm /   đánh giá
Phát hành ngày
2024-09-15
In ra
Số. 3C (2024): SEPTEMBER 2024 . VOLUME 66 NUMBER 3
Chuyên mục
PHYSICAL SCIENCES