STUDY OF ALUMINIUM OXIDE THIN FILM PREPARED BY RF MAGNETRON SPUTTERING

Abstract

Al₂O₃ is used widely for their properties of high dielectric, anti- erosion and anti- atomic oxygen effects.This compound was investigated by scientists  in various methods. At the first time, the High Technology Laboratory of the Natural Sciences University in Ho Chi Minh city fabricated Al₂O₃ thin film by rf sputtering method. Optical properties of the film were investigated by UV- VIS spectroscopy. Its composition were determined by IR transmittance  and reflectance absorption (ATR) spectroscopy methods. The structures  of thin film were determined by X- ray diffraction (XRD) and AFM spectroscopies. Furthermore, the phase changes by annealing was investigated by IR transmittance absorption spectroscopy and XRD spectra.