Controlled growth and characterization of monolayer MoS2 by using metal-organic chemical vapor deposition

DOI: 10.18173/2354-1059.2021-0006

Abstract

Recently, novel physical properties originating from quantum confinement endow the twodimensional (2D) transition metal dichalcogenides, such as MoS2, or WSe2 to attract a great deal of attention. However, the synthesis of 2D-TMDC has to be still limited, in which the precursors are almost based on high vapor pressure inorganic materials, that produce a smallscale film, and it is mainly performed only on conventional Si\SiO2 substrate. In this work, we successfully synthesize the atomic thickness of 2D-MoS2 films by using metal-organic chemical vapor deposition (MOCVD) on several kinds of substrate, namely silicon (Si), silicon dioxide (SiO2), graphite foil, or fluorine-doped tin oxide (FTO). The morphology of samples is observed by field emission scanning electron microscopy (FE-SEM), and scanning transmission electron microscopy (STEM). The lattice vibrational and optical properties are investigated by Raman and photoluminescence (PL) spectroscopies, respectively. With the same MOCVD growing condition, as-obtained samples exhibit the hexagonal configuration (2H phase), whereas the surface morphology and the thickness show a discrepancy, depending on the substrates.