Studying and preparing tin films by d.c reactive magnetron sputtering method
Abstract
TiN thin films have been deposited by DC reactive magnetron sputtering method on glass substrates. This report, we study the effects of substrate temperature, threshold sputtering voltage versus gas ratio N2/Ar, sputtering pressure and target-substrate distance on structure, electrical and optical properties. Thin film properties studied by using X rays diffraction, Four probes resistivity and optical tranmission measurements.
The results showed that substrate temperature, threshold sputtering voltage versus gas ratio N2/Ar , sputtering presure and target-substrate distance effect on structure, electrical and optical properties of thon films. Films having low electrical resistivity of 35 mW.cm, refractive and extinct index of 1.35 and 3.49 at 550 nm wave length, are prepared at substrate temperature of 3000C , target-substrate distance of 4.5 cm, sputtering presure of 3 mtorr, threshold sputtering voltage of 550 V at gas ratio of 0.1.