Fabricating and investigating properties of memristors on flexible substrate (PET)

Abstract

In this study, we have fabricated resistive switching memory device based on TiO₂ thin films on ITO/PET commercial substrate. The study on the transmittance spectra showed that with the 100 nm-TiO₂/ITO/PET device, the transmission is more than 80 % in the visible region and approximately of 85 % at wavelength of 550 nm. Ag/TiO₂/ITO devices exhibit excellent stable bipolar resistive switching characteristics under electrical field bias of  -2 V à 2 V range on the flat state and even after reproductive physical stresses of 500 cycles. Our study on TiO₂ based memristors suggests that resistive switching memories are suitable for flexible transparent application in the future.