Fabricating and investigating the influence of the temperature on electrical and optical properties of the p-type SnO2:Ga (GTO) thin films prepared by DC magnetron sputtering

Abstract

Transparent Ga-doped tin oxide (GTO) thin films were fabricated on quartz glasses from (SnO₂ + Ga₂O₃) mixture ceramic target by direct current (DC) magnetron sputtering in Ar gas at  the pressure of 4.10^-3torr. X ray diffraction (XRD), Hall - effect and UV-vis spectra measurements were performed to characterize the deposited films. Films were deposited directly with different temperatures in order to investigate the influence of temperature on their electrical and optical propertises. After that GTO films were deposited at 400 ^oC and then were annealed in Ar gas at different temperature in order to eliminate acceptor and donor compensation. Deposited films showed p-type electrical property, polycrystalline tetragonal rutile structure and their average transmittance above 80 % in visible light range at the optimum annealing temperature of 550 ^oC. In addition, p-type conductivity was also confirm by the non-linear characteristics of a p-type GTO/n Si. The best electrical properties of film were obtained on 15 % wt Ga₂O₃-doped SnO₂ target with its resistivity, hole concentration and Hall mobility were 0,63 W.cm, 3,3.10¹⁸ cm^-3 and 3,01 cm²V^-1s^-1, respectively.