ELECTRON TRANSPORT COEFFICIENT IN SiH4-He MIXTURES FOR FLUID MODELS

Abstract

The electron transport coefficients with respect to E/N (ratio of the electric
field E to the neutral number density N) in the range of 0.1 - 1000Td
(Townsend) for 10%, 30%, 50%, 70%, and 90% SiH4-He mixture (volume
mixing ratio), were calculated using the Bolsig+ program. These calculations
based on the reliable electron collision cross section set for SiH4 molecule and
He atom. Therefore, the present results will be the necessary data for
applications using SiH4-He mixture, especially in deposition of a-Si:H films
using capacitively coupled plasma.