CALCULATION OF ELECTRON TRANSPORT COEFFICIENTS IN SiH4-Xe USING BOLSIG+ PROGRAM
Tóm tắt
Microwave-excited plasma enhanced chemical vapor deposition using SiH4-Xe to create polycrystalline silicon is grown at a temperature of 300 °C. The Bolsig+ program has been used to solve the Boltzmann equation (BE) using the direct simulation Monte Carlo (DSMC) method which is based on the Monte Carlo (MC) simulation for the limited number of fluid-flows. The plasma properties, which include energy mobility, energy diffusion coefficient and ionization coefficients in various concentrations of SiH4-Xe mixture. In this paper, the electron transport coefficients with respect to E/N (ratio of the electric field E to the neutral number density N) in the range of 10 -1000 Td (Townsend) were calculated using the Bolsig+ program for 10%, 30%, 50%, 70%, and 90% SiH4-Xe mixture. Electron transport coefficients include mobility, electron energy distribution function (EEDF), diffusion coefficient, and ionization coefficient.